Ge diffusion on Si surfaces

• Authors: Andrey Dolbak , Boris Olshanetsky
• Languages of publication: EN

Abstracts

EN

Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.

Keywords

EN

Surface; silicon; germanium; surface structure; surface diffusion; low energy electron diffraction; Auger electron spectroscopy; 68.47.Fg; 68.35.Fx

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2006
• Volume: 4
• Issue: 3
• Pages: 310-317

Dates

published

1 - 9 - 2006

online

1 - 9 - 2006

Contributors

author

Andrey Dolbak

• Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation

author

Boris Olshanetsky

• Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation

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Identifiers

DOI

10.2478/s11534-006-0015-0