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2015 | 1 | 1 |

Article title

Control of sputtering parameters for deposition of NbN
thick films


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We report a detailed study on control of sputtering parameters
for synthesizing NbN superconducting thick films. The NbN
films are deposited on single crystalline silicon (100) by DC
reactive sputtering, i.e., deposition of Nb in the presence of
reactive N2 gas. After several runs, samples were prepared
with Ar:N2 partial gas ratios of 90:10, 80:20 and 70:30 for a
deposition time of 10 minutes. The fabricated films (400 nm
thick) crystallize with a cubic structure, with a small quantity
of Nb/NbOx embedded in the main NbN phase. All three
samples are characterized by scanning electron microscopy
(SEM) and energy dispersive X-ray spectroscopy (EDAX),
to examine their microstructure and elemental compositional
distributions, respectively. The roughness was mesured by
atomic force microscopy (AFM). The optimized film prepared
with Ar:N2 gas ratio of 80:20 has a Tc(R = 0) in zero and
140 kOe fields of 14.8 K and 8.8 K, respectively. The upper
critical field Hc2(0) of the studied superconducting films
is calculated from magneto-transport [R(T )H] measurements
using GL and WHH equations.







Physical description


1 - 1 - 2015
11 - 6 - 2013
19 - 9 - 2013
25 - 11 - 2013


  • Quantum Phenomena and Applications Division,
    National Physical Laboratory (CSIR) Dr. K. S. Krishnan Road,
    New Delhi-110012, India
  • Quantum Phenomena and Applications Division,
    National Physical Laboratory (CSIR) Dr. K. S. Krishnan Road,
    New Delhi-110012, India


  • [1] D. Dochev, V. Desmaris, A. Pavolotsky, D. Meledin, Z.Lai, A. Henry, E. Janzen, E. Pippel, J. Woltersdorf andV. Belitsky, Supercond. Sci. Technol. 035016 (2011)24.
  • [2] W. Slysz, M. Guziewicz, M. Borysiewicz, J.Z. Domagała,I. Pasternak, K. Hejduk, W Rzodkiewicz, J. Ratajczak,J. Bar, M. Wegrzecki, P. Grabiec, R. Grodecki, I.Wegrzecka and R.. Sobolewski, Acta Phys. PolonicaA, 200 (2011) 120.[Crossref]
  • [3] P. Khosropanah, J. R. Gao, W. M. Laauwen, and M.Hajenius, and T. M. Klapwijk Applied Physics Letters,221111 (2007) 91.[Crossref]
  • [4] F. Marsili, A. Gaggero, L. H. Li, A. Surrente, R. Leoni,F. Levy and A. Fiore, Supercond. Sci. Technol. 095013(2009) 22.
  • [5] Z. Wang, A. Kawakami, Y. Uzawa and B. Komiyama,Appl. Phys. Lett., 2034 (1994) 64.[Crossref]
  • [6] Y. Nakamura, H. Terai, K. Inomata, T. Yamamoto, W.Qiu, and Z. Wang, Applied Physics Letters 212502(2011) 99.[Crossref]
  • [7] D. D. Bacon, A. T. English, S. Nakahara, F. G. Peters,H. Schreiber, W. R. Sinclair and R. B. van Dover, J.Appl. Phys. 6509 (1983) 54.[Crossref]
  • [8] R. Sanjines, M. Benkahoul, M. Papagno and F. Levy,J. Appl. Phys., 044911 (2006) 99.[Crossref]
  • [9] G. I. Oya and Y. Onodera, J. Appl. Phys. 2833 (1976)47.[Crossref]
  • [10] A. C. Anderson, D. J. Lichtenwalner and W. T. Brogan,IEEE, Trans. on Magn., 2084 (1989) 25.
  • [11] S. P. Chockalingam, M. Chand, J. Jesudasan, V. Tripathiand P. Raychaudhuri, Phys. Rev. B, 214503(2008) 77.[Crossref]
  • [12] M. W. Johnson and A. M. Kadin, Phys. Rev. B, 3593(1998) 57.[Crossref]
  • [13] T. Ishiguro, K. Matsushima, K. Hamasaki, J. Appl.Phys., 1151 (1993) 73.[Crossref]
  • [14] J. M. Murduck, D. W. Capone, Ivan K. Schuller, S.Foner and J. B. Ketterson, Appl. Phys. Lett. 504(1988) 52.[Crossref]
  • [15] T. Shapoval, V. Metlushko, M. Wolf, B. Holzapfel, V.Neu and L. Schultz, Phys. Rev. B, 092505 (2010) 81.[Crossref]
  • [16] V. V. Moshchalkov, M. Baert, V. V. Metlushko, E.Rosseel, M. J. Van Bael, K. Temst, R. Jonckheere andY. Bruynseraede, Phys. Rev. B, 7385 (1996) 54.[Crossref]
  • [17] T. Shapoval, H. Stopfel, S. Haindl, J. Engelmann, D.S. Inosov, B. Holzapfel, V. Neu and L. Schultz, Phys.Rev. B, 214517 (2011) 83.[Crossref]
  • [18] A. Nigro, G. Nobile, M. G. Rubino and R. Vaglio,Phys. Rev. B, 3970 (1988) 37.[Crossref]
  • [19] U. Patel, Z. L. Xiao, A. Gurevich, S. Avci, J. Hua, R.Divan, U. Welp and W. K. Kwok, Phys. Rev. B 012504(2009) 80.[Crossref]
  • [20] Y. Saito, T. Amtyama, K. Yasohama, K. Yasukouchiand Y. Onodera, Appl. Phys. Lett., 285 (1969) 14.[Crossref]
  • [21] J. Hinz, A. J. Bauer, T. Thiede, R. A. Fischer and L.Frey, Semicond. Sci. Technol., 045009 (2010) 25.
  • [22] A. Kawakami, Y. Uzawa and Z. Wang, Appl. Phys.Lett., 3954 (2003) 83.[Crossref]
  • [23] R. Jha, J. Jyoti, V.P.S. Awana, J. Supercond. Nov. Magn. DOI 10.1007/s10948-013-2132-5[Crossref]
  • [24] A. H. Farha, A. Oguz Er, Y. Ufuktepe, G. Myneni andH. E. Elsayed-Ali, Appl. Sur. Sci. 1613 (2011) 258.[Crossref]
  • [25] D. Gall, S. Kodambaka, M. A. Wall, I. Petrov and J.E. Greene, J. Appl. Phys., 9086 (2003) 93.[Crossref]
  • [26] H. Bartolf, A. Engel, A. Schilling, K. Il’in, M. Siegel,H. W. Hubers and A. Semenov, Phys. Rev. B, 024502(2010) 81.[Crossref]
  • [27] G. K. Chang and B. Serin, Phys. Rev. 274 (1966) 145.

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