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2004 | 2 | 1 | 147-159
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Fowler-nordheim tunnelling in Au−TiO2−Ag film structures

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I-V-characteristics have been measured for Au−TiO2−Ag structures with TiO2 layers of 30 and 180 nm thickness. The TiO2 films were grown by atomic layer deposition (ALD) technique. In the case of negative bias on the Au electrode, the conduction currents through TiO2 layers follow the Fowler-Nordheim formula for field emission over several orders of magnitude. The bulk of the currents may be attributed to tunnelling, seemingly through a Schottky barrier at the Au−TiO2 junction. In the case of reversed polarity the currents are also observed, but cannot be interpreted as tunnelling.
Physical description
1 - 3 - 2004
1 - 3 - 2004
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