Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

• Authors: Yasumitsu Matsuo , Takehiko Ijichi , Hironori Yamada , Junko Hatori , Seiichiro Ikehata
• Languages of publication: EN

Abstracts

EN

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE
c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE
G=0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E
c). From these results, it is suggested that the PEN-FET becomes a memory device.

Keywords

EN

molecular conductor; organic thin-film field effect transistor; ferroelectric memory effect; 73.40.Qv; 73.61.Ph; 77.84.Fa; 72.80.Le

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2004
• Volume: 2
• Issue: 2
• Pages: 357-366

Dates

published

1 - 6 - 2004

online

1 - 6 - 2004

Contributors

author

Yasumitsu Matsuo

• Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan

author

Takehiko Ijichi

• Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan

author

Hironori Yamada

• Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan

author

Junko Hatori

• Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan

author

Seiichiro Ikehata

• Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan

References

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Identifiers

DOI

10.2478/BF02475636