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Journal
2004 | 2 | 2 | 357-366
Article title

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

Content
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Languages of publication
EN
Abstracts
EN
We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE
c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE
G=0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E
c). From these results, it is suggested that the PEN-FET becomes a memory device.
Publisher

Journal
Year
Volume
2
Issue
2
Pages
357-366
Physical description
Dates
published
1 - 6 - 2004
online
1 - 6 - 2004
Contributors
  • Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan, ymatsuo@rs.kagu.tus.ac.jp
  • Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
  • Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
author
  • Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
  • Department of Applied Physics, Faculty of Science, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, 162-8601, Tokyo, Japan
References
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  • [2] H.E. Katz, X. Michael Hong and A. Dodabalapur and R. Sarpeshkar: “Organic field-effect transistors with polarizable gate insulators”, J. Appl. Phys., Vol. 91, (2002), pp. 1572–1576. http://dx.doi.org/10.1063/1.1427136[Crossref]
  • [3] T. Shimidzu, T. Iyoda, H. Segawa and K. Honda: “Functionalizations of conducting polymers toward molecular devices”, Mol. Cryst. Liq. Cryst., Vol. 216, (1992), pp. 91–94.
  • [4] Chung-Kun Song, Bon-Won Koo and Min-Kyung Jung: “Application of organic materials to electronic devices with respect to thin film transistor and sensor”, Mol. Cryst. Liq. Cryst., Vol. 370, (2001), pp. 337–342.
  • [5] M. Takada, H. Graaf, Y. Yamashita and H. Tada: “BTQBT thin films: a promissing candidate for high mobility oragnic fieled effect transistors”, Jpn. J. Appl. Phys. Lett., Vol. 41, (2002), pp. L4-L6. http://dx.doi.org/10.1143/JJAP.41.L4[Crossref]
  • [6] T. Minakata, H. Imai, M. Ozaki and K. Saco: “Structural studies on highly ordered and highly conductive thin films of pentacene”, J. Appl. Phys., Vol. 72, (1992), pp. 5220–5225. http://dx.doi.org/10.1063/1.352004[Crossref]
  • [7] Y. Matsuo, A. Sasaki, Y. Yoshida and S. Ikehata: “New state structure of iodine doped pentacene film”, Material Science and Engineering, Vol. B60, (1990), pp. 133–136.
  • [8] Y. Matsuo, A. Sasaki, Y. Yoshida and S. Ikehata: “New stage structure of iodine doped pentacene film (II)”, Mol. Cryst. Liq. Cryst., Vol. 340, (2000), pp. 223–228.
  • [9] Y. Matsuo, T. Ijichi, J. Hatori and S. Ikehata: “Fabrication and electrical properties of field effect transistor based on ferroelectric insulator and pentacene film”, Current Applied Physics, (in Press).
  • [10] S.M. Sze: Physics of semiconductor devices, John Wiliy & Sons, New York, 1981, chapter 6,7 and 8.
  • [11] T. Komoda, Y. Endo, K. Kyuno and A. Toriumi: “Field-dependent mobility of highly-oriented pentacene (C22H14) thin film transistors”, Jpn. J. Appl. Phys., Vol. 41, (2002), pp. 2767–2769. http://dx.doi.org/10.1143/JJAP.41.2767[Crossref]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_BF02475636
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