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2004 | 2 | 2 | 254-265
Article title

Surface diffusion of Pb on clean Si surfaces

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EN
Abstracts
EN
Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.
Publisher

Journal
Year
Volume
2
Issue
2
Pages
254-265
Physical description
Dates
published
1 - 6 - 2004
online
1 - 6 - 2004
Contributors
author
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia, olshan@isp.nsc.ru
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_2478_BF02475631
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