Direct analytical calculations of the static dielectric
permittivity-dependent electron mobility due to different
elastic scattering mechanisms for n-type InSb were
carried out. The calculated static dielectric permittivity increases
by increasing of donor concentration. The temperature
dependence of the electron mobility from 10 K up to
300 K has been demonstrated. Generally, the electron mobility
shows peak behavior in this range of temperatures.
The direct correlation between the electron mobility and
the static dielectric permittivity at 300 K was investigated.
The dependence of the electron mobility on donor concentration
was discussed both when the static dielectric permittivity
is assumed to be varying and when it is assumed
to be a constant. The difference in behavior was noticed
particularly at high donor concentrations.