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Journal
2015 | 13 | 1 |
Article title

Correlation between Electron Mobility and Static
Dielectric Permittivity of n-InSb

Authors
Content
Title variants
Languages of publication
EN
Abstracts
EN
Direct analytical calculations of the static dielectric
permittivity-dependent electron mobility due to different
elastic scattering mechanisms for n-type InSb were
carried out. The calculated static dielectric permittivity increases
by increasing of donor concentration. The temperature
dependence of the electron mobility from 10 K up to
300 K has been demonstrated. Generally, the electron mobility
shows peak behavior in this range of temperatures.
The direct correlation between the electron mobility and
the static dielectric permittivity at 300 K was investigated.
The dependence of the electron mobility on donor concentration
was discussed both when the static dielectric permittivity
is assumed to be varying and when it is assumed
to be a constant. The difference in behavior was noticed
particularly at high donor concentrations.
Publisher

Journal
Year
Volume
13
Issue
1
Physical description
Dates
received
18 - 5 - 2015
accepted
25 - 9 - 2015
online
26 - 11 - 2015
Contributors
author
  • Deanship of Scientific
    Research, King Saud University, Riyadh 11451, Saudi Arabia
    and Physics Department, Faculty of Science, Alexandria University,
    Alexandria 21511, Egypt
References
  • [1] K. Martens, , Chi On Chui, , G. Brammertz, B. De Jaeger, D.Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat,H. E. Maes, and G. Groeseneken, IEEE Trans. Electron dev. 55(2008) 547-556.[Crossref]
  • [2] S. Balendhran, J. Deng, J. Zhen Ou, S. Walia, J. Scott, J. Tang, K.L.Wang, M. R. Field, S. Russo, S. Zhuiykov, M. S. Strano, N. Medhekar,S. Sriram, M. Bhaskaran, and K. Kalantar-zadeh, Adv.Mat. 25 (2013) 109–114.
  • [3] T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N.Yurkov, G. S. Simin, M. A. Khan, Solid-State Electron. 47 (2003)111–115.[Crossref]
  • [4] S. Jin, M. V. Fischetti, and T. W. Tang, J. Appl. Phys. 102 (2007)083715.[Crossref]
  • [5] H. S. Nalwa, ed., Handbook of Low and High Dielectric ConstantMaterials and Their Applications, Academic Press (1999).
  • [6] G.W. Castellan, and F. Seitz, On the Energy States of Impuritiesin Silicon, in Semiconducting Materials. Butterworth, London(1951).
  • [7] S. Dhar, and A.H.Marshak, Solid-State Electron., 28 (1985) 763-766.[Crossref]
  • [8] K. Alfaramawi and M.A. Alzamil, Optoelectron. Adv. Mat.- RapidComm. 3 (2009) 569.
  • [9] B. K. Ridley, J. Phys. C: Solid State Phys. 10 (1977) 1589.[Crossref]
  • [10] S. M. Sze, and K. K. Ng, Physics of Semiconductor Devices, JohnWiley & Sons, New Jersy (2006).
  • [11] M. Capizzi, G. A. Thomas, F. DeRosa, R. N. Bhatt, and T. M. Rice,Phys. Rev. Lett. 44 (1980) 1019-1022.[Crossref]
  • [12] J. Serre and A. Ghazali, Phys. Rev. B 28 (1983) 4704-4715.[Crossref]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_1515_phys-2015-0039
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