Application of Metal-Oxide-Semiconductor
structures containing silicon nanocrystals in
radiation dosimetry

• Authors: Diana Nesheva , Nikola Nedev , Mario Curiel , Valeri Dzhurkov , Abraham Arias , Emil Manolov , David Mateos , Benjamin Valdez , Irina Bineva , Rigoberto Herrera
• Languages of publication: EN

Abstracts

EN

This article makes a brief review of the most important
results obtained by the authors and their collaborators
during the last four years in the field of the development
of metal-insulator-silicon structures with dielectric
film containing silicon nanocrystals, which are suitable
for applications in radiation dosimetry. The preparation
of SiOx films is briefly discussed and the annealing
conditions used for the growth of silicon nanocrystals are
presented. A two-step annealing process for preparation
of metal-oxide-semiconductor structures with three-layer
gate dielectrics is described. Electron Microscopy investigations
prove the Si nanocrystals growth, reveal the crystal
spatial distribution in the gate dielectric and provide
evidences for the formation of a top SiO2 layerwhen applying
the two-step annealing. Two types of MOS structures
with three region gate dielectricswere fabricated and characterized
by high frequency capacitance/conductancevoltage
(C/G-V) measurements. The effect of gamma and
ultraviolet radiation on the flatband voltage of preliminary
charged metal-oxide-semiconductor structures is investigated
and discussed.

Keywords

EN

MOS structures; Si nanocrystals; radiation dosimetry

Discipline

• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
• 68.65.-k: Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties(for structure of nanoscale materials, see 61.46.-w; for magnetic properties of interfaces, see 75.70.Cn; for superconducting properties, see 74.78.-w; for optical properties, see 78.67.-n; for transport properties, see 73.63.-b; for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g)
• 61.80.-x: Physical radiation effects, radiation damage(for photochemical reactions, see 82.50.-m; for effects of ionizing radiation on biological systems, see 87.53.-j)

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2015
• Volume: 13
• Issue: 1

Dates

published

1 - 1 - 2015

accepted

23 - 8 - 2014

received

28 - 2 - 2014

online

3 - 11 - 2014

Contributors

author

Diana Nesheva

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria

author

Nikola Nedev

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

author

Mario Curiel

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

author

Valeri Dzhurkov

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria

author

Abraham Arias

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

author

Emil Manolov

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria

author

David Mateos

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

author

Benjamin Valdez

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

author

Irina Bineva

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria

author

Rigoberto Herrera

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

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Identifiers

DOI

10.1515/phys-2015-0006