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2015 | 13 | 1 |
Article title

Application of Metal-Oxide-Semiconductor
structures containing silicon nanocrystals in
radiation dosimetry

Content
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Languages of publication
EN
Abstracts
EN
This article makes a brief review of the most important
results obtained by the authors and their collaborators
during the last four years in the field of the development
of metal-insulator-silicon structures with dielectric
film containing silicon nanocrystals, which are suitable
for applications in radiation dosimetry. The preparation
of SiOx films is briefly discussed and the annealing
conditions used for the growth of silicon nanocrystals are
presented. A two-step annealing process for preparation
of metal-oxide-semiconductor structures with three-layer
gate dielectrics is described. Electron Microscopy investigations
prove the Si nanocrystals growth, reveal the crystal
spatial distribution in the gate dielectric and provide
evidences for the formation of a top SiO2 layerwhen applying
the two-step annealing. Two types of MOS structures
with three region gate dielectricswere fabricated and characterized
by high frequency capacitance/conductancevoltage
(C/G-V) measurements. The effect of gamma and
ultraviolet radiation on the flatband voltage of preliminary
charged metal-oxide-semiconductor structures is investigated
and discussed.
Contributors
author
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria, nesheva@issp.bas.bg
author
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
author
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria
author
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
author
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria
author
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
author
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_1515_phys-2015-0006
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