Raman modes in transferred bilayer CVD graphene

• Authors: Ahti Niilisk , Tauno Kahro , Valter Kiisk , Mihkel Rähn , Harry Alles , Jaan Aarik , Väino Sammelselg
• Languages of publication: EN

Abstracts

EN

A systematic experimental Raman spectroscopic study of twisted bilayer graphene (tBLG) domains localized inside wide-area single layer graphene (SLG) produced by low-pressure CVD on Cu foil and transferred onto SiO2/Si substrate has been performed. According to the Raman characterization the tBLG domains had a great variety of twisting angles θ between the bottom and top graphene layers (6° < θ < 25°). The twisting angle θ was estimated from the spectral position of the rotating R and R' modes in the Raman spectrum.Under G band resonance conditions the breathing mode ZO' with a frequency of 95- 97 cm−1 was detected, and a breathing mode ZO was found in the spectra between 804 cm−1 and 836 cm−1, its position depending on the twisting angle θ. An almost linear relationship was found between the frequencies ωZO and ωR. Also a few other spectral peculiarities were found, e.g. a high-energy excitation of the G band resonance, the 2G overtone appearing at 3170-3180 cm−1 by the G band resonance, revealing a linear dispersion of 80 cm−1/eV of the 2D band in tBLG

Keywords

EN

chemical vapour deposition; graphene; twisted bilayer; Raman spectroscopy

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2015
• Volume: 13
• Issue: 1

Dates

published

1 - 1 - 2015

online

2 - 10 - 2014

received

31 - 3 - 2014

accepted

5 - 8 - 2014

Contributors

author

Ahti Niilisk

• University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia

author

Tauno Kahro

• University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia

author

Valter Kiisk

• University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia

author

Mihkel Rähn

• University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia

author

Harry Alles

• University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia

author

Jaan Aarik

• University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia

author

Väino Sammelselg

• University of Tartu, Institute of Physics, Department of Materials Science, Ravila 14c, EE-50411 Tartu, Estonia

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Identifiers

DOI

10.1515/phys-2015-0003