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Article title

Low-energy electron transmission for the analysis
of the interface barrier formation and the density
of the unoccupied electronic states in the
ultra-thin layers of fluorinated

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The interfacial structure made from the thermally
deposited 5 – 7 nm thick layers of hexadecafluoro
copper phthalocyanine (F16-CuPc) and of the unsubstituted
copper phthalocyanine (CuPc) was subjected
to the studies. The surface work function and the density
of the unoccupied electron states (DOUS) located 5-
20 eV above the Fermi level (EF) were investigated during
the CuPc/F16-CuPc interface formation using the very
low energy electron diffraction (VLEED) method and the
total current spectroscopy (TCS) measurement scheme.
The DOUS peak structure of the organic films studied obtained
from the TCS results showed a good correspondence
to the main π* and σ* DOUS bands obtained from
the density functional theory (DFT) calculations. The interfacial
barrier was characterized by the negative charge
transfer from the CuPc overlayer to the F16-CuPc underlayer
occurred within the 5 nm thick interfacial region in
the CuPc overlayer which was accompanied by the decrease
of the surface work function from 4.9±0.1 eV to
4.3±0.1 eV. The stabilization of the π* DOUS bands, as
well as restructuring of the low lying σ* bands was observed
in the in the case of the fluorinated film (F16-
CuPc) compared to the case of the unsubstituted CuPc film.
Physical description
1 - 9 - 2014
19 - 12 - 2014
29 - 1 - 2015
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