Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

• Authors: H. Tanaka , T. Kawazoe , M. Ohtsu , K. Akahane
• Languages of publication: EN

Abstracts

EN

We fabricated a silicon (Si) laser by applying a
dressed-photon–phonon assisted annealing process to a
ridge-type light waveguide that we fabricated via siliconon-
insulator (SOI) technology. We also evaluated a nearinfrared
Si photodiode having optical gain to estimate the
differential gain coefficient for designing lightwaveguides.
We designed light waveguides having a thickness of 15 μm
to realize a large optical confinement factor. The fabricated
Si laser oscillated at a wavelength of 1.4 μm. The intensity
of amplified spontaneous emission (ASE) lightwas too
low to be observed, because the threshold current density
was so low that the Si laser started oscillating immediately
after ASE occurred. The threshold current density for oscillation
was estimated to be 40 A/cm2 from the current–
voltage characteristic. This threshold current density was
twenty-eight times smaller than that of a Si laser we fabricated
previously.

Keywords

EN

Waveguide; Ridge-type; SOI; ASE; Optical confinement factor; Si-PD

• Publisher: De Gruyter Open
• Journal: Fluorescent Materials
• Year: 2015
• Volume: 1
• Issue: 1

Dates

online

28 - 4 - 2015

Contributors

author

H. Tanaka

• Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

author

T. Kawazoe

• Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

author

M. Ohtsu

• Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan

author

K. Akahane

• The National Institute of Information and Communications Technology, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan

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Identifiers

DOI

10.1515/fma-2015-0001