PL EN


Preferences help
enabled [disable] Abstract
Number of results
2015 | 1 | 1 |
Article title

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Content
Title variants
Languages of publication
EN
Abstracts
EN
We fabricated a silicon (Si) laser by applying a
dressed-photon–phonon assisted annealing process to a
ridge-type light waveguide that we fabricated via siliconon-
insulator (SOI) technology. We also evaluated a nearinfrared
Si photodiode having optical gain to estimate the
differential gain coefficient for designing lightwaveguides.
We designed light waveguides having a thickness of 15 μm
to realize a large optical confinement factor. The fabricated
Si laser oscillated at a wavelength of 1.4 μm. The intensity
of amplified spontaneous emission (ASE) lightwas too
low to be observed, because the threshold current density
was so low that the Si laser started oscillating immediately
after ASE occurred. The threshold current density for oscillation
was estimated to be 40 A/cm2 from the current–
voltage characteristic. This threshold current density was
twenty-eight times smaller than that of a Si laser we fabricated
previously.
Publisher

Year
Volume
1
Issue
1
Physical description
Dates
online
28 - 4 - 2015
Contributors
author
  • Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
author
  • Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
author
  • Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
author
  • The National Institute of Information and Communications Technology, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
References
  • [1] Di L. and Bowers J. E., Nat. Photonics, 2010, 4, 511–517.[Crossref]
  • [2] Pavesi L., Negro L. Dal,Mazzoleni C., Franzo G., Priolo F., Nature,2000, 408, 440-444
  • [3] Neal R.T., Charlton M. D. C., Parker G. J., Finlayson C. E., Netti M.C. Baumberg J.J., Appl. Phys. Lett., 2003, 83, 4598-4600
  • [4] Takahashi Y., Inui Y., Chihara M., Asano T., Terawaki R., Noda S.,Nature, 2013, 498, 470–474.
  • [5] Saito S., Suwa Y., Arimoto H., Sakuma N., Hisamoto D.,Uchiyama H., et al., Appl. Phys. Lett., 2009, 95, 241101-1–3.
  • [6] Kawazoe T., Ohtsu M., Akahane K., Yamamoto N., Appl. Phys. B,2012, 107, 659–663.[Crossref]
  • [7] Rosenzweig M., Mohrle M., Duser H., Venghaus H., 1991, 21,1804–1811.
  • [8] Ohtsu M., "Dressed Photons -Concepts of LightMatter FusionTechnology-," Springer, 2013
  • [9] Tanaka Y., Kobayashi K., Physica E, 2007, 40, 297-300[Crossref]
  • [10] Kawazoe T., Mueed M. A., Ohtsu M., Appl. Phys. B, 2011, 104,747–54.[Crossref]
  • [11] Wada N., Kawazoe T., Ohtsu M., Appl. Phys. B, 2012, 108, 25–29.[Crossref]
  • [12] Tanaka H., Kawazoe T., Ohtsu M., Appl. Phys. B, 2012, 108, 51–56.[Crossref]
  • [13] Tran M.A., Kawazoe T., Ohtsu M., Appl. Phys. A, 2014, 115, 105–111[Crossref]
  • [14] Wada N., Tran M.A., Kawazoe T., Ohtsu M., Appl. Phys. A, 2014,115, 113–118[Crossref]
  • [15] M. Yamaguchi, T. Kawazoe, M. Ohtsu, Appl. Phys. A, 2014, 115,119–125
  • [16] Kimura Y., A. Ito, Miyachi M., Takahashi H.,Watanabe A., H. Ota,Ito N., Tanabe T., et al., 2001 Jpn. J. Appl. Phys. 40 L1103–L1106
  • [17] Soibel A.,Mansour K., Qiu Y., Hill C. J., Yang R. Q., J. Appl. Phys.,2007, 101, 093104-1–4
  • [18] Kazi Z. I., Egawa T., Jimbo T., Umeno M., IEEE Photonics Technol.Lett., 1999, 11, 1563–65[Crossref]
  • [19] Agrawal G.P., Dutta N.K., Semiconductor Lasers. 2nd ed. NewYork: Van Nostrand Reinhold, 1993
  • [20] Higuchi H., Namizaki H., Oomura E., Hirano R., Sakakibara Y.,Susaki W., et al., Appl. Phys. Lett., 1982, 41, 320–321 [Crossref]
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.-psjd-doi-10_1515_fma-2015-0001
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.