Performance of lead iodide nuclear radiation detectors with the introduction of rare earth elements

• Authors: Mahmoud Hassan , Marie Matuchova , Karel Zdansky
• Languages of publication: EN

Abstracts

EN

Lead iodide has been recognized as a promising material for room temperature radiation detectors. It has a wide band-gap (∼ 2.3 eV), high atomic numbers (82, 53) and it is environmentally very stable compared to mercuric iodide. Electrical and optical properties of lead iodide grown crystals purified under the influence of selected rare earth elements have been investigated. Photo-luminescence and capacitance-voltage measurements have been performed using different rare earth elements.

Keywords

EN

Lead iodide; rare earth elements; capacitance measurements; wide band-gap; room temperature radiation detectors; 72.80.Ey; 29.40.Wk; 81.10.Fq; 78.55.Cr

• Publisher: De Gruyter Open
• Journal: Open Physics
• Year: 2006
• Volume: 4
• Issue: 1
• Pages: 117-123

Dates

published

1 - 3 - 2006

online

1 - 3 - 2006

Contributors

author

Mahmoud Hassan

• Electronics Engineering Department, Princess Sumaya University, RSS Str., P O Box 1438, Al-Jubaiha, 11941, Jordan

author

Marie Matuchova

• Institute of Radio Engineering and Electronics, Czech Academy of Science, Chaberska 57, 182 51, Praha, Czech Republic

author

Karel Zdansky

• Institute of Radio Engineering and Electronics, Czech Academy of Science, Chaberska 57, 182 51, Praha, Czech Republic

References

• [1] J. Novák, S Hasenöhrl, M. Kuliffayová and J. Oswald: “Gettering properties of PrO2 in In0.53Ga0.47As LPE growth”, J. Cryst. Growth, Vol. 110, (1991), pp. 862–866. http://dx.doi.org/10.1016/0022-0248(91)90644-K
• [2] B. Põdör, L. Csontos, K. Somogyi and D. Vignaud: “Photoluminescence and double crystal X-ray study of InGaAs/InP: Effect of rare earth (dysprosium) doping during growth”, Acta Phys. Pol. A, Vol. 87, (1995), pp. 465–468.
• [3] A. Steckl, J. Heikenfeld, Lee Dong-Seon, M. Garter, C. Baker, W. Yongqiang and R. Jones: “Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices”, IEEE J. Sel. Top. Quant., Vol. 8, (2002), pp. 749–766. http://dx.doi.org/10.1109/JSTQE.2002.801690[Crossref]
• [4] P. Favennec, H. Lapos-Haridon, M. Salvi, D. Moutonnet and Y. Le Guillou: “Luminescence of erbium implanted in various semiconductors IV, III-V and II-VI materials”, Electron. Lett., Vol. 25, (1989), pp. 718–719.
• [5] I. Bolshakova, P. Koptsev, I. Melnyk, T. Moskovets, S. Krukovsky and D. Zayachuk: “Control of Parameters of III-V Compound Microcrystals and Epitaxial Layers by means of Complex Doping”, Cryst. Res. Technol., Vol. 36, (2001), pp. 989–996. http://dx.doi.org/10.1002/1521-4079(200110)36:8/10<989::AID-CRAT989>3.0.CO;2-C[Crossref]
• [6] Y. Lee, G. Shu, I. Cheng, C. Chen, J. Shen, W. Uen, C. Chang, Y. Chen, W. Chou “Optical studies of the Holmium-doped InGaAsP epilayers”, physica status, Vol. 200, (2003), pp.439–445. http://dx.doi.org/10.1002/pssa.200306702[Crossref]
• [7] D. Partin: “Lead telluride doped with rare-earth elements”, J. Appl. Phys., Vol. 57, (1985), pp. 1997–2000. http://dx.doi.org/10.1063/1.334385[Crossref]
• [8] N. Veissid, C. An, A. Ferreira da Silva and J. Pinto de Souza: “Gap Energy Studied by Optical Transmittance in Lead Iodide Monocrystals Grown by Bridgman's Method”, Mater. Res., Vol. 2, (1999), pp. 279–281.
• [9] T. Schlesinger, R. James, M. Schieber, J. Toney, J. Van Scyoc, L. Salary, H. Hermon, J. Lund, A. Burger, K.-T. Chen, E Cross, E. Soria E.K. Shah, M. Squillante, H. Yoon and M. Goorsky: “Characterization of lead iodide for nuclear spectrometers”, Nucl. Instrum. Meth. A, Vol. 380, (1996), pp. 193–197. http://dx.doi.org/10.1016/S0168-9002(96)00343-9[Crossref]
• [10] M. Matuchova, K. Zdansky, M. Hassan, J. Zavadil, O. Prochazkova and J. Maixner: “Study of Influence of the Rare Earth Elements on the Properties of Lead Iodide”, In: 14 th International Conference on Crystal Growth (ICCG14), Grenoble, France, 2004.
• [11] M. Hassan: “Lead Iodide Radiation Detectors Crystal Growth and Charecterization”, In: The XXV Conference on Solid State Physics and Material Science, Egypt, 6–10 March 2005, The Egyptian Materials Research Society (Eg-MRS), Cairo, Egypt, 2005.
• [12] M. Hassan: “Extending the C-V method of establishing MIS detector quality to mercuric iodide radiation detectors”, Proc. Latv. Aca. Sc., Vol. 54, (2000), pp. 105–107.

Identifiers

DOI

10.1007/s11534-005-0010-x