PSJD - Yadda

1

Nature of Donors in SiC

100%

Suchanek B., Dwiliński R., Kamińska M., Palczewska M., Vlaskina S.

Acta Physica Polonica A

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1995

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vol. 87

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issue 2

321-324

EN

6H-SiC samples were examined by ESR technique in temperature range from 5 K up to 300 K. Two kinds of ESR lines were observed: a single line at g = 2.0054 ± 0.0007, called X-line, and a triplet corresponding to isolated nitrogen defect. Ionization energy of X defect was determined as about 60 meV and the ionization energy of isolated nitrogen was determined as about 200 meV below SiC conduction band.

2

Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

100%

Suchanek B., Palczewska M., Pakuła K., Baranowski J., Kamińska M.

Acta Physica Polonica A

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1997

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vol. 92

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issue 5

1001-1004

EN

Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10^{17} cm^{-1} and mobility up to 500 cm^{2}/(V s) were achieved whereas hole concentration up to 7×10^{17} cm^{-3} and mobility about 16 cm^{2}/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g_{⊥}=1.9487 and g_{∥}=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.

3

Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers

86%

Wojdak M., Baranowski J. M., Suchanek B., Pakuła K., Jun J., Suski T.

Acta Physica Polonica A

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1997

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vol. 92

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issue 5

1059-1062

EN

In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10^{17} cm^{-3} and mobility 16 cm^{2}/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.

4

GaN Layers Grown by Reactive Ion Plating

73%

Żubka A., Dwiliński R., Suchanek B., Janik W., Wysmołek A., Kwiatkowski S., Kamińska M., Shaginyan L.

Acta Physica Polonica A

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1995

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vol. 88

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issue 5

1058-1062

EN

GaN layers grown on ceramics, sapphire or SiC substrates using reactive ion plating method are presented. In reactive ion plating method gallium from a hot source reacts on a heated substrate with nitrogen partially ionized. Rutherford backscattering technique was applied to check the composition of the samples and gallium to nitrogen ratio was found to be close to one. However, Rutherford backscattering studies showed also a remarkable amount of unintentional impurities present in the layers. The structure of GaN was determined using reflection high-energy electron diffraction. It appeared that polycrystal and monocrystal can be grown, depending on growth conditions. Absorption spectra taken on the layers grown on sapphire showed a tail of band to band absorption starting at about 370 nm. Carrier concentration was of the order of 1019-1020 cm^{-3} at room temperature and did not change much with temperature decrease. No luminescence from the layers was detected, most probably due to high concentration of impurities.

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4 Acta Physica Polonica A

2 1997

2 1995

4 Suchanek B.

3 Kamińska M.

2 Dwiliński R.

2 Pakuła K.

2 Palczewska M.

1 Baranowski J.

1 Baranowski J. M.

1 Janik W.

1 Jun J.

1 Kwiatkowski S.

1 Shaginyan L.

1 Suski T.

1 Vlaskina S.

1 Wojdak M.

1 Wysmołek A.

1 Żubka A.

Search results

Nature of Donors in SiC

Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers

GaN Layers Grown by Reactive Ion Plating